After recently celebrating 25 years of silicon carbide at ST and the beginning of a new era, we wanted to share a timeline of how we got here. A quarter of a century ago, everything started on one-inch wafers and a close relationship with academia. Today, SiC is transforming electric cars, among many other markets. In the process, we managed to earn more than 70 patents on SiC, and we continue to dedicate enormous resources to the technology. Here are some of the major milestones of the last 25 years.
Timeline
Collaboration with the Physics Department of the University of Catania
First contract pertaining to Silicon Carbide. Agreement with the Institute for Microelectronics and Microsystems of the Italian National Research Council (Consiglio Nazionale delle Ricerche, or CNR).
ST’s first Schottky diode demonstration using Silicon Carbide in partnership with the CNR.
ETC installs an epitaxial reactor prototype in an ST fab. It’s a first step for the manufacturing of SiC devices.
ST manufactures Silicon Carbide devices on 2-inch wafers.
First SiC Schottky diode demonstrator produced by ST.
ST manufactures Silicon Carbide devices on 3-inch wafers.
ST mass produces its first generation of Silicon Carbide diodes.
We manufacture our first power MOSFET demonstrator on 3-inch wafers.
ST manufactures Silicon Carbide devices on 4-inch wafers.
ST mass produces its second generation of Silicon Carbide diodes.
ST mass produces its third generation of Silicon Carbide diodes.
ST mass produces its first generation of Silicon Carbide MOSFETs.
ST manufactures Silicon Carbide devices on 6-inch wafers.
ST mass produces its second generation of Silicon Carbide MOSFETs.
By the end of the year, ST silicon carbide power devices integrated commercial vehicles, inaugurating the massive use of SiC in high-end automotive applications.
ST mass produces its third generation of Silicon Carbide MOSFETs.
ST manufactures Silicon Carbide devices on 8-inch wafers.
