1st Generation SiC Diode
July 22, 2021
ST mass produces its first generation of Silicon Carbide diodes.
July 22, 2021
ST mass produces its first generation of Silicon Carbide diodes.
July 22, 2021
ST manufactures Silicon Carbide devices on 3-inch wafers.
July 22, 2021
First SiC Schottky diode demonstrator produced by ST.
July 22, 2021
ST manufactures Silicon Carbide devices on 2-inch wafers.
July 22, 2021
ETC installs an epitaxial reactor prototype in an ST fab. It’s a first step for the manufacturing of SiC devices.
July 22, 2021
ST’s first Schottky diode demonstration using Silicon Carbide in partnership with the CNR.
July 2, 2021
First contract pertaining to Silicon Carbide. Agreement with the Institute for Microelectronics and Microsystems of the Italian National Research Council (Consiglio Nazionale delle Ricerche, or CNR).
July 2, 2021
Collaboration with the Physics Department of the University of Catania